NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, we are driving innovation in the secure connected vehicle, end-to-end security & privacy and smart connected solutions markets.
NXP’s Smart Front-End & Interfaces product line is developing millimeter wave technology products. Specifically, this new effort is directed towards bridging high-speed wired interfaces with millimeter wave wireless technologies, which will offer ground-breaking and innovative solutions to the consumer, computing, and industrial markets. Significant technical challenges must be overcome to make these products a reality and this journey will provide a truly rewarding experience.
The goal of this internship is to improve the Power Amplifier (PA) Gain (performances) variation versus the process variation (+mismatch) for millimeter (MMW) project, in advance CMOS technology. The aim to to find correlations with other parameters (DC, ringo oscillator frequency, PCM, detectors …), define trimming principles (strategies) and put in place efficient simulation technics.
The internship main phases are described below:
Level of studies: Last year of electronics engineering school
Knowledge required
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NXP Semiconductors N.V. (NASDAQ: NXPI) enables a smarter, safer, and more sustainable world through innovation. As the world leader in secure connectivity solutions for embedded applications, NXP is pushing boundaries in the automotive, industrial & IoT, mobile, and communication infrastructure markets. For more information, visit www.nxp.com
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