The primary goal of this thesis is to investigate the feasibility and advantages of Gallium Nitride (GaN) technology as a key component in inverter modules, comparing it to existing solutions such as Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The work will be divided into three main phases: technology analysis and benchmarking, gate driver architecture design optimized for GaN devices, and bench characterization and validation of a previous-generation GaN gate driver in NXP’s laboratory.

Must Have

• Investigate the feasibility and advantages of Gallium Nitride (GaN) technology in inverter modules.
• Conduct an in-depth study of GaN technology for inverter applications.
• Benchmark GaN against alternative technologies (SiC, IGBT) in terms of switching speed, efficiency, thermal performance, reliability, and cost implications.
• Develop and validate a gate driver architecture optimized for GaN devices.
• Focus on high-speed switching, low parasitic inductance, and robust protection mechanisms for GaN.
• Perform analog design activities, including architecture definition, behavioral modeling, simulation, and PVT analysis.
• Supervise and support layout design activities, considering parasitic effects, signal integrity, and impact of layout on performance.
• Validate the performance of a previous-generation GaN gate driver in NXP’s laboratory environment.
• Perform hands-on bench testing and waveform analysis.
• Identify critical issues and limitations in the existing design.

Perks & Benefits

• Online and offline learning opportunities to develop core and professional skills.
• Programs focused on diversity, inclusion, and equality.

Purpose and Objectives

The primary goal of this thesis is to investigate the feasibility and advantages of Gallium Nitride (GaN) technology as a key component in inverter modules, compared to existing solutions such as Silicon Carbide (SiC) MOSFETs and Insulated Gate BiPolar Transistors (IGBTs).

The work will be divided into three main phases:

Phase 1: Technology Analysis and Benchmarking

Objective:

Conduct an in-depth study of GaN technology for inverter applications.

Activities:

• Review state-of-the-art literature and technical papers to understand current trends and advancements in GaN-based power electronics.
• Benchmark GaN against alternative technologies (SiC, IGBT) in terms of:
• Switching speed
• Efficiency
• Thermal performance
• Reliability and cost implications
• Analyze what major OEMs and semiconductor companies are currently implementing in this domain.
• Collaborate with NXP’s Application and Product Definition Team to gather expert insights and feedback on GaN adoption strategies.

Expected Outcome:

A comprehensive report summarizing the advantages, limitations, and market positioning of GaN technology for inverter modules.

Phase 2: Gate Driver Architecture Design for GaN

Objective:

Develop and validate a gate driver architecture optimized for GaN devices.

Activities:

• Focus on GaN requirements:
• High-speed switching
• Low parasitic inductance
• Robust protection mechanisms
• Perform analog design activities, including:
• Architecture definition and evaluation
• Behavioral modeling and simulation
• PVT (Process, Voltage, Temperature) analysis
• Address industrialization aspects, ensuring the design meets manufacturability and reliability standards.
• Supervise and support layout design activities, considering:
• Parasitic effects
• Signal integrity
• Impact of layout on performance

Expected Outcome:

A fully simulated and optimized gate driver architecture for GaN, ready for prototyping.

Phase 3: Bench Characterization and Validation

Objective:

Validate the performance of a previous-generation GaN gate driver in NXP’s laboratory environment.

Activities:

• Perform hands-on bench testing and waveform analysis.
• Identify critical issues and limitations in the existing design.
• Document findings in a detailed characterization report, including:
• Measured performance vs. simulated expectations
• Recommendations for improvement

Expected Outcome:

A complete validation report highlighting gaps and providing actionable insights for next-generation designs.

Key Deliverables

• Literature review and benchmarking report on GaN vs. SiC/IGBT technologies.
• Gate driver architecture design documentation, including simulations and layout considerations.
• Bench characterization report of previous-generation gate driver.

Required Skills

• Analog circuit design and simulation (SPICE-based tools)
• Layout design (Cadence Virtuoso or equivalent)
• Power electronics fundamentals
• Laboratory measurement techniques (oscilloscopes, power analyzers)
• Collaboration with cross-functional teams (Application Engineering, Product Definition)

Career Development Opportunities

Bright Minds. Bright Futures.

We believe that a key component to growing our business is to develop our people. To enable you to grow your career at NXP, we offer online and offline learning opportunities to help you develop some of your core and professional skills.

Commitment At NXP.

We recognize NXP is a powerful change agent as we continue to deliver innovative solutions that advance a more sustainable future. We remain steadfast in our commitment to sustainability and making measurable year-on-year progress. Also, we aim to create an inclusive work environment and we will not tolerate racism, discrimination or harassment of any kind. We have programs in place focused on diversity, inclusion and equality.